为了让尊贵的您相信我们升邦电子所提供的【Hynix海力士半导体】IC系列均为原装正品,我们特作出如下零风险承诺:
1、升邦电子保证提供的所有产品均为原厂全新正品,假一赔十;
2、升邦电子所提供的所有产品均符合行业技术标准和质量检测标准,符合原厂苛刻的相关技术指标;
3、若产品存在任何质量问题,本公司无条件负责退货、退款或换货,查明问题原因并赔偿由于我们的疏忽给贵司带来的一切损失。
如需订购,请拔打全国服务热线:400-009-2889
HYNIX SDRAM/DDR 系列产品特 点:
•高速度— 1600Mbps的DDR3能迎合需要高速效的数码电视、STB、蓝光播放机和网络设备
•低功耗 —DDR3(1.5V) 的电压比DDR2(1.8V)低,能减低系统的耗电量
•工作温度范围宽 - 最新的Q版本工作温度在-40 to +105;
•高品质 - 由于是国内生产与加工,无形中降低了很多成本。广泛应用于数码类以及消费类电子产品中;
•产线长 - Hynix已拥有全系列的DRAM产品。其中以TSOP-II和FBGA封装的128Mb~256Mb SDRAM、128Mb~512Mb DDR。
HYNIX SDRAM系列规格参数 | ||||||
Part Number | Density | Ory | Bank | Package/Speed | Refresh Power(V) | Package |
H57V1262GFR | 128Mb | 8M*16 | 8Banks | LC(L)50/C(L)60/C(L)70/C(L)75 | 4K/64ms 3.3±0.3V | 60Ball FBGA |
H57V1262GTR | 128Mb | 8M*16 | 4Banks | LC(L)50/C(L)60/C(L)70/C(L)75 | 4K/64ms 3.3±0.3V | 54pin TSOP(II) |
H57V2582GTR | 256Mb | 32M*8 | 8Banks | LC(L)50/C(L)60/C(L)70/C(L)75 | 4K/64ms 3.3±0.3V | 54pin TSOP(II) |
H57V2562GFR | 256Mb | 16M*16 | 8Banks | LC(L)50/C(L)60/C(L)70/C(L)75 | 4K/64ms 3.3±0.3V | 60Ball FBGA |
H57V2562GTR | 256Mb | 16M*16 | 8Banks | LC(L)50/C(L)60/C(L)70/C(L)75 | 4K/64ms 3.3±0.3V | 54pin TSOP(II) |
HYNIX DDR SDRAM系列规格参数 | ||||||
Part Number | Density | Ory | Bank | Package/Speed | Refresh Power(V) | Package |
H5DU1262GTR | 128Mb | 8M*16 | 4Banks | LC(L)CC/C(L)B3 | 4K/64ms 2.5±0.1V | 66PinTSOPII |
H5DU2582GTR | 256Mb | 32M*8 | 8Banks | LC(L)CC/C(L)B3 | 8K/64ms 2.5±0.1V | 60BallFBGA |
H5DU2562GFR | 256Mb | 16M*16 | 8Banks | LC(L)CC/C(L)B3 | 8K/64ms 2.5±0.1V | 60BallFBGA |
H5DU2562GTR | 256Mb | 16M*16 | 8Banks | LC(L)CC/C(L)B3 | 8K/64ms 2.5±0.1V | 66PinTSOPII |
H5DU5182EFR | 512Mb | 64M*8 | 8Banks | LC(L)CC/C(L)B3 | 8K/64ms 2.5±0.1V | 60BallFBGA |
H5DU5182ETR | 512Mb | 64M*8 | 8Banks | LC(L)CC/C(L)B3 | 8K/64ms 2.5±0.1V | 66PinTSOPII |
H5DU5162EFR | 512Mb | 32M*16 | 8Banks | LC(L)CC/C(L)B3 | 8K/64ms 2.5±0.1V | 60BallFBGA |
H5DU5162ETR | 512Mb | 32M*16 | 8Banks | LC(L)CC/C(L)B3 | 8K/64ms 2.5±0.1V | 66PinTSOPII |
HYNIX DDR2 SDRAM系列规格参数 | ||||||
Part Number | Density | Ory | Bank | Package/Speed | Refresh Power(V) | Package |
H5PS2562GFR | 256Mb | 16M*16 | 8Banks | HCF8/E7/F7/E6 | 4K/64ms 1.8±0.1V | 84BallFBGA |
H5PS5182GFR | 512Mb | 64M*8 | 8Banks | HCE7/F7E6/D5/CC | 8K/64ms 1.8±0.1V | 84BallFBGA |
H5PS5162GFR | 512Mb | 32M*16 | 8Banks | HCF8/E7F7/E6 | 8K/64ms 1.8±0.1V | 84BallFBGA |
H5PS1G83EFR | 1Gb | 128M*8 | 8Banks | HC(L)F8/E7F7/E6 | 8K/64ms 1.8±0.1V | 84BallFBGA |
H5PS1G83JFR | 1Gb | 128M*8 | 8Banks | HC(L)F8/E7F7/E6 | 8K/64ms 1.8±0.1V | 84BallFBGA |
H5PS1G63EFR | 1Gb | 64M*16 | 8Banks | HC(L)E7/F7/E6 | 8K/64ms 1.8±0.1V | 84BallFBGA |
H5PS1G63JFR | 1Gb | 64M*16 | 8Banks | HC(L)E7F7/E6 | 8K/64ms 1.8±0.1V | 84BallFBGA |
HYNIX DDR3 SDRAM系列规格参数 | ||||||
Part Number | Density | Ory | Bank | Package/Speed | Refresh Power(V) | Package |
H5TQ1G83BFR | 1Gb | 128M*8 | 8Banks | HC(L)F7/F8/H9/K0 | 8K/64ms 1.5±0.075V | 78BallFBGA |
H5TQ1G83DFR | 1Gb | 128M*8 | 8Banks | HC(L)F7/F8/H9/K0 | 8K/64ms 1.5±0.075V | 96BallFBGA |
H5TQ1G63BFR | 1Gb | 64M*16 | 8Banks | HC(L)F7/F8/H9/K0 | 8K/64ms 1.5±0.075V | 96BallFBGA |
H5TQ1G63DFR | 2Gb | 64M*16 | 8Banks | HC(L)F7/F8/H9/K0 | 8K/64ms 1.5±0.075V | 78BallFBGA |
H5TC2G83BFR | 2Gb | 256M*8 | 8Banks | HC(L)F7/F8/H9/K0 | 8K/64ms 1.35±0.075V | 78BallFBGA |
H5TQ2G83BFR | 2Gb | 256M*8 | 8Banks | HC(L)F7/F8/H9/K0 | 8K/64ms 1.5±0.075V | 78BallFBGA |
H5TQ2G83DFR | 2Gb | 256M*8 | 8Banks | HC(L)F7/F8/H9/K0 | 8K/64ms 1.5±0.075V | 78BallFBGA |
H5TC2G63BFR | 2Gb | 128*16 | 8Banks | HC(L)F7/F8/H9/K0 | 8K/64ms 1.35±0.075V | 78BallFBGA |
H5TQ2G63BFR | 2Gb | 128M*16 | 8Banks | HC(L)F7/F8/H9/K0 | 8K/64ms 1.5±0.075V | 78BallFBGA |
H5TQ2G63DFR | 2Gb | 128M*16 | 8Banks | HC(L)F7/F8/H9/K0 | 8K/64ms 1.5±0.075V | 78BallFBGA |
H5TC4G83MFR | 4Gb | 512M*8 | 8Banks | HC(L)F7/F8/H9/K0 | 8K/64ms 1.35±0.075V | 78BallFBGA |
H5TQ4G83MFR | 4Gb | 512M*8 | 8Banks | HC(L)F7/F8/H9/K0 | 8K/64ms 1.5±0.075V | 96BallFBGA |
H5TC4G63MFR | 4Gb | 256M*16 | 8Banks | HC(L)F7/F8/H9/K0 | 8K/64ms 1.35±0.075V | 78BallFBGA |
H5TQ4G63MFR | 4Gb | 256M*16 | 8Banks | HC(L)F7/F8/H9/K0 | 8K/64ms 1.5±0.075V | 96BallFBGA |